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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 200 mOhm | 20 V | P-Channel | 1.1 W | 2.3 A | 320 pF | -55 °C | 150 °C | SOT-23-6 | 5.8 nC | SOT-23-6 | 12 V | 700 mV | 4.5 V | 2.7 V | Surface Mount | MOSFET (Metal Oxide) |