MOSFET 2N-CH 30V 11A/12A 8DFN
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Configuration | Drain to Source Voltage (Vdss) | Mounting Type | FET Feature | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Power - Max [Min] | Power - Max [Max] | Rds On (Max) @ Id, Vgs [Max] | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 1380 pF | 11 A 12 A | 11 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30 V | Surface Mount | Logic Level Gate | 8-DFN (5x6) | 2.5 V | 24 nC | 8-PowerVDFN | 1.9 W | 2.1 W | ||
Alpha & Omega Semiconductor Inc. | 1560 pF | 15 A 28 A | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30 V | Surface Mount | Logic Level Gate | 2.3 V | 21 nC | 8-WDFN Exposed Pad | 5.2 mOhm | 2 W 2.2 W |