DIODE MODULE GP 1.4KV 3TOWER
| Part | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Diode Configuration | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | Three Tower | 15 µA | 250 A | 1.2 V | 1 Pair Common Cathode | 150 °C | -55 °C | Three Tower | 1400 V | Standard Recovery >500ns | 200 mA | Standard |