60V P-CHANNEL ENHANCEMENT MODE M
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Mounting Type | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 8-SOIC | 3.9 mm | 0.154 in | 785 pF | 4.5 V 10 V | MOSFET (Metal Oxide) | P-Channel | Surface Mount | 2.5 W | 3.2 A | 8-SOP | -55 °C | 150 °C | 2.5 V | 20 V | 60 V | 10 nC | 110 mOhm |