DIODE GEN PURP 100V 3A DO214AB
| Part | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Package / Case | Technology | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | DO-214AB (SMC) | 150 °C | -55 °C | 50 ns | 80 pF | 100 V | 3 A | 10 µA | DO-214AB SMC | Standard | 200 mA 500 ns | Surface Mount | |
Taiwan Semiconductor Corporation | DO-214AB (SMC) | 150 °C | -55 °C | 50 ns | 80 pF | 100 V | 3 A | 10 µA | DO-214AB SMC | Standard | 200 mA 500 ns | Surface Mount | 1 V |
Taiwan Semiconductor Corporation | DO-214AB (SMC) | 150 °C | -55 °C | 50 ns | 80 pF | 100 V | 3 A | 10 µA | DO-214AB SMC | Standard | 200 mA 500 ns | Surface Mount | 1 V |
Taiwan Semiconductor Corporation | DO-214AB (SMC) | 150 °C | -55 °C | 50 ns | 80 pF | 100 V | 3 A | 10 µA | DO-214AB SMC | Standard | 200 mA 500 ns | Surface Mount |