IC DRAM 2GBIT PAR 78TWBGA
| Part | Grade | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Write Cycle Time - Word, Page | Qualification | Memory Organization | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Mounting Type | Clock Frequency | Memory Interface | Memory Type | Memory Format | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Automotive | 8 | 78-TWBGA | 10.5 | 15 ns | AEC-Q100 | 256M x 8 | SDRAM - DDR3 | 105 °C | -40 °C | 20 ns | Surface Mount | 667 MHz | Parallel | Volatile | DRAM | 2 Gbit | 1.575 V | 1.425 V |
ISSI, Integrated Silicon Solution Inc | Automotive | 8 | 78-TWBGA | 10.5 | 15 ns | AEC-Q100 | 256M x 8 | SDRAM - DDR3L | 105 °C | -40 °C | 20 ns | Surface Mount | 800 MHz | Parallel | Volatile | DRAM | 2 Gbit | 1.45 V | 1.283 V |
ISSI, Integrated Silicon Solution Inc | Automotive | 8 | 78-TWBGA | 10.5 | 15 ns | AEC-Q100 | 256M x 8 | SDRAM - DDR3 | 105 °C | -40 °C | 20 ns | Surface Mount | 667 MHz | Parallel | Volatile | DRAM | 2 Gbit | 1.575 V | 1.425 V |
ISSI, Integrated Silicon Solution Inc | Automotive | 8 | 78-TWBGA | 10.5 | 15 ns | AEC-Q100 | 256M x 8 | SDRAM - DDR3L | 105 °C | -40 °C | 20 ns | Surface Mount | 800 MHz | Parallel | Volatile | DRAM | 2 Gbit | 1.45 V | 1.283 V |