2N6517%20(LEGACY%20FAIRCHILD) Series

500 mA High Voltage Bipolar Junction Transistors

Catalog

500 mA High Voltage Bipolar Junction Transistors

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor 2N6517RLRAG	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517CBU	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole		500 mA	NPN	625 mW	200 MHz	1 V	20			400 V	150 °C
ON Semiconductor 2N6517TA	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20				150 °C
ON Semiconductor 2N6517RLRA	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517RLRP	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	TO-92	TO-226	Through Hole	350 V	500 mA	NPN	625 mW	200 MHz	1 V	20	-55 °C	150 °C
ON Semiconductor 2N6517CTA	TO-226-3 TO-92-3	50 nA	TO-92-3		Through Hole		500 mA	NPN	625 mW	200 MHz	1 V	20			400 V	150 °C

Catalog

500 mA High Voltage Bipolar Junction Transistors

Key Features

• Voltage and Current are Negative for PNP Transistors

• Pb-Free Package is Available*

Description

The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.Replacement active OPN:2N6517 (Legacy Fairchild)https://www.onsemi.com/products/discretes-drivers/general-purpose-and-low-vcesat-transistors/2n6517-legacy-fairchild