DIODE MODULE GP 1.2KV 3TOWER
| Part | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Package / Case | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Technology | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 Pair Common Cathode | 1.2 V | Three Tower | Three Tower | 250 A | Standard | 15 µA | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | 1.2 kV | Chassis Mount |