Beta
⌘K
MOSFET N-CH 600V 6A TO220SIS
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Technology | Mounting Type | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.25 Ohm | 40 W | 16 nC | 6 A | TO-220-3 Full Pack | N-Channel | MOSFET (Metal Oxide) | Through Hole | 30 V | TO-220SIS | 10 V | 600 V | 150 °C | 800 pF |