800V N-CHANNEL MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 5 A | -55 °C | 150 °C | TO-220AB | MOSFET (Metal Oxide) | 30 V | 800 V | 2.7 Ohm | 146 W | 17 nC | N-Channel | 10 V | Through Hole | TO-220-3 | 4 V | ||
Panjit International Inc. | 5 A | -55 °C | 150 °C | TO-220AB | MOSFET (Metal Oxide) | 30 V | 500 V | 1.55 Ohm | 87.5 W | N-Channel | 10 V | Through Hole | TO-220-3 | 4 V | 11 nC | 491 pF |