Beta
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60V N-CHANNEL ENHANCEMENT MODE M
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power Dissipation (Max) | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 39 nC | Surface Mount | 2.5 V | 2256 pF | 8-SOP | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2.5 W | N-Channel | 20 V | 4.5 V 10 V | 12 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 60 V | 10 A |