2G, 1.2/1.8V, LPDDR2, 128MX16, 533MHZ, 134 BALL BGA (10MMX11.5MM) ROHS, IT
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Memory Interface | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Memory Type | Clock Frequency | Write Cycle Time - Word, Page | Memory Organization | Mounting Type | Memory Size | Supplier Device Package | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 533 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | HSUL_12 | DRAM | 1.14 V 1.7 V | 1.3 V 1.95 V | 134-TFBGA | Volatile | 400 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | 5.5 ns |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | HSUL_12 | DRAM | 1.14 V 1.7 V | 1.3 V 1.95 V | 134-TFBGA | Volatile | 533 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | 5.5 ns |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 400 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 533 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 400 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 533 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 533 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 400 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) | |
ISSI, Integrated Silicon Solution Inc | -40 °C | 85 °C | Parallel | DRAM | 1.14 V | 1.95 V | 134-TFBGA | Volatile | 400 MHz | 15 ns | 128 M | Surface Mount | 2 Gbit | 134-TFBGA (10x11.5) |