20V P-CHANNEL ENHANCEMENT MODE M
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | Package / Case | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 900 mV | 1.4 nC | 67 pF | 1.2 V 4.5 V | 20 V | 350 mW | SOT-323 | 400 mOhm | 500 mA | -55 °C | 150 °C | Surface Mount | 10 V | SC-70 SOT-323 | N-Channel | MOSFET (Metal Oxide) |