Beta
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MOSFET P-CH 30V 5.3A 8SOIC
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Technology | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 2.5 W | 690 pF | 4.5 V 10 V | 8-SOIC | -55 °C | 150 °C | 3 V | MOSFET (Metal Oxide) | P-Channel | Surface Mount | 50 mOhm | 23 nC | 5.3 A | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 30 V |