MOSFET N-CH 650V 31A TO220-3
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Qorvo | 51 nC | TO-220-3 | TO-220-3 | Through Hole | 12 V 12 V | N-Channel | 1500 pF | 25 V | 31 A | -55 °C | 175 ░C | 6 V | 650 V | 190 W | 100 mOhm | |||
Qorvo | D2PAK-7 | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | Surface Mount | N-Channel | 25 V | 27 A | -55 °C | 175 ░C | 6 V | 650 V | 136.4 W | 105 mOhm | SiCFET (Cascode SiCJFET) | 760 pF | 23 nC | |||
Qorvo | 51 nC | TO-247-3 | TO-247-3 | Through Hole | 12 V 12 V | N-Channel | 1500 pF | 25 V | 31 A | -55 °C | 175 ░C | 6 V | 650 V | 190 W | 100 mOhm |