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DIODE MOD SCHOT 200V 100A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Mounting Type | Supplier Device Package | Current - Reverse Leakage @ Vr | Package / Case | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 V | 1 Pair Common Anode | 920 mV | 100 A | 150 °C | -55 °C | Schottky | Chassis Mount | Twin Tower | 3 mA | Twin Tower | 200 mA 500 ns |
GeneSiC Semiconductor | 200 V | 1 Pair Common Cathode | 920 mV | 100 A | 150 °C | -55 °C | Schottky | Chassis Mount | Twin Tower | 3 mA | Twin Tower | 200 mA 500 ns |