MEMORY CIRCUIT, 256KX16, CMOS, PBGA48, 8 X 8 MM, 0.75 MM PITCH, ROHS COMPLIANT, FBGA-48
| Part | Access Time | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Write Cycle Time - Word, Page | Package / Case | Memory Interface | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Mounting Type | Memory Organization | Memory Format | Supplier Device Package | Memory Size | Package / Case | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Everspin Technologies Inc. | 35 ns | MRAM (Magnetoresistive RAM) | 3.6 V | 3 V | 35 ns | 48-LFBGA | Parallel | 105 °C | -40 °C | Non-Volatile | Surface Mount | 256 K | RAM | 48-FBGA (8x8) | 512 kb | ||||
Everspin Technologies Inc. | 35 ns | MRAM (Magnetoresistive RAM) | 3.6 V | 3 V | 35 ns | 44-TSOP | Parallel | 85 °C | -40 °C | Non-Volatile | Surface Mount | 256 K | RAM | 44-TSOP2 | 512 kb | 10.16 mm | 10.16 mm | ||
Everspin Technologies Inc. | 35 ns | MRAM (Magnetoresistive RAM) | 3.6 V | 3 V | 35 ns | 48-LFBGA | Parallel | 105 °C | -40 °C | Non-Volatile | Surface Mount | 256 K | RAM | 48-FBGA (8x8) | 512 kb | ||||
Everspin Technologies Inc. | 35 ns | MRAM (Magnetoresistive RAM) | 3.6 V | 3 V | 35 ns | 44-TSOP | Parallel | 125 °C | -40 °C | Non-Volatile | Surface Mount | 256 K | RAM | 44-TSOP2 | 512 kb | 10.16 mm | 10.16 mm | Automotive | AEC-Q100 |
Everspin Technologies Inc. | 35 ns | MRAM (Magnetoresistive RAM) | 3.6 V | 3 V | 35 ns | 44-TSOP | Parallel | 70 °C | 0 °C | Non-Volatile | Surface Mount | 256 K | RAM | 44-TSOP2 | 512 kb | 10.16 mm | 10.16 mm |