DIODE MOD SCHOTT 30V 250A 3TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Supplier Device Package | Current - Average Rectified (Io) (per Diode) | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration | Current - Reverse Leakage @ Vr | Package / Case | Voltage - Forward (Vf) (Max) @ If | Technology | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 30 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Anode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 30 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Cathode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 35 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Cathode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 45 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Anode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 20 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Cathode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 100 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Cathode | 1 mA | Three Tower | 840 mV | Schottky | |
GeneSiC Semiconductor | 35 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Anode | 1 mA | Three Tower | 700 mV | Schottky | |
GeneSiC Semiconductor | 60 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Cathode | 1 mA | Three Tower | Schottky | 750 mV | |
GeneSiC Semiconductor | 60 V | 200 mA 500 ns | Three Tower | 250 A | Chassis Mount | 150 °C | -55 °C | 1 Pair Common Anode | 1 mA | Three Tower | Schottky | 750 mV |