IC NVSRAM 2MBIT PARALLEL 32EDIP
| Part | Memory Organization [custom] | Memory Organization [custom] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Access Time | Technology | Package / Case | Package / Case | Package / Case | Memory Format | Memory Type | Memory Size | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 70 °C | 0 °C | Parallel | 85 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | 85 ns | Through Hole | ||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 85 °C | -40 °C | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | Through Hole | |||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 70 °C | 0 °C | Parallel | 100 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | Through Hole | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 70 °C | 0 °C | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | Through Hole | |||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 85 °C | -40 °C | Parallel | 85 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | 85 ns | Through Hole | ||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 85 °C | -40 °C | Parallel | 85 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | 85 ns | Through Hole | ||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 85 °C | -40 °C | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | Through Hole | |||
Analog Devices Inc./Maxim Integrated | 256 K | 8 | 32-EDIP | 70 °C | 0 °C | Parallel | 70 ns | NVSRAM (Non-Volatile SRAM) | 0.6 in | 15.24 mm | 32-DIP Module | NVSRAM | Non-Volatile | 2 Gbit | 4.5 V | 5.5 V | Through Hole |