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MOSFET N-CH 800V 6A TO220SIS
| Part | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Operating Temperature | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 1.7 Ohm | MOSFET (Metal Oxide) | 10 V | 4 V | 6 A | TO-220SIS | 32 nC | 45 W | 150 °C | Through Hole | 800 V | 1350 pF | 30 V | N-Channel |