DIODE MODULE GP 600V 100A 2TOWER
| Part | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Package / Case | Technology | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 mA 500 ns | 600 V | 150 °C | -55 °C | 1 Pair Common Anode | 100 A | Twin Tower | Twin Tower | Standard | Chassis Mount | 1.7 V | 110 ns |
GeneSiC Semiconductor | 200 mA 500 ns | 600 V | 150 °C | -55 °C | 1 Pair Common Cathode | 100 A | Twin Tower | Twin Tower | Standard | Chassis Mount | 1.7 V | 110 ns |