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MOSFET N-CH 600V 25A TO220SIS
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220SIS | 3.5 V | 125 mOhm | 25 A | MOSFET (Metal Oxide) | 150 °C | 30 V | 2400 pF | TO-220-3 Full Pack | 10 V | N-Channel | 600 V | 45 W | 40 nC | Through Hole |