IC DRAM 256MBIT PARALLEL 66TSOP
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Access Time | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Size | Supplier Device Package | Write Cycle Time - Word, Page | Memory Type | Memory Format | Clock Frequency | Package / Case [custom] | Package / Case | Package / Case [custom] | Mounting Type | Memory Organization |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | 70 °C | 0 °C | 750 ps | 2.7 V | 2.3 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 133 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 70 °C | 0 °C | 700 ps | 2.7 V | 2.5 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 70 °C | 0 °C | 700 ps | 2.7 V | 2.3 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 167 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 70 °C | 0 °C | 700 ps | 2.7 V | 2.3 V | Parallel | 256 Gbit | 15 ns | Volatile | DRAM | 167 MHz | 60-FBGA | Surface Mount | 32 M | |||
Micron Technology Inc. | 70 °C | 0 °C | 750 ps | 2.7 V | 2.3 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 133 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 85 °C | -40 °C | 700 ps | 2.7 V | 2.5 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 85 °C | -40 °C | 700 ps | 2.7 V | 2.5 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 85 °C | -40 °C | 700 ps | 2.7 V | 2.5 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 85 °C | -40 °C | 700 ps | 2.7 V | 2.5 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 200 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |
Micron Technology Inc. | 70 °C | 0 °C | 750 ps | 2.7 V | 2.3 V | Parallel | 256 Gbit | 66-TSOP | 15 ns | Volatile | DRAM | 133 MHz | 0.4 in | 66-TSSOP | 0.4 in | Surface Mount | 32 M |