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PHOTOCOUPLER
| Part | Package / Case | Output Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Output / Channel | Current Transfer Ratio (Min) [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Vce Saturation (Max) [Max] | Voltage - Forward (Vf) (Typ) | Input Type | Mounting Type | Voltage - Output (Max) [Max] | Number of Channels | Current - DC Forward (If) (Max) | Turn On / Turn Off Time (Typ) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | ||||||||||||||||||
Toshiba Semiconductor and Storage | 4-SMD Gull Wing | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | |
Toshiba Semiconductor and Storage | 4-SMD | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | 0.3 in 7.62 mm |
Toshiba Semiconductor and Storage | 4-SMD Gull Wing | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | |
Toshiba Semiconductor and Storage | 4-SMD | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | 0.3 in 7.62 mm |
Toshiba Semiconductor and Storage | 4-DIP (0.300" 7.62mm) | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-DIP | 1.2 V | 1.25 V | DC | Through Hole | 300 V | 1 | 50 mA | 30 µs 110 µs | |
Toshiba Semiconductor and Storage | 4-SMD Gull Wing | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | |
Toshiba Semiconductor and Storage | 4-SMD Gull Wing | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-SMD | 1.2 V | 1.25 V | DC | Surface Mount | 300 V | 1 | 50 mA | 30 µs 110 µs | |
Toshiba Semiconductor and Storage | ||||||||||||||||||
Toshiba Semiconductor and Storage | 4-DIP | Darlington | -55 °C | 110 °C | 150 mA | 1000 % | 60 µs | 30 µs | 4-DIP | 1.2 V | 1.25 V | DC | Through Hole | 300 V | 1 | 50 mA | 30 µs 110 µs |