Beta
⌘K
DIODE SIL CARB 1.2KV 5A TO220-2
| Part | Package / Case | Current - Reverse Leakage @ Vr | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Mounting Type | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-220-2 | 50 µA | No Recovery Time | 1.2 kV | 1.8 V | 175 ░C | -55 C | SiC (Silicon Carbide) Schottky | TO-220-2 | 0 ns | Through Hole | 5 A | 260 pF |