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MOSFET N-CH 550V 14A TO220SIS
| Part | Power Dissipation (Max) [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 50 W | TO-220-3 Full Pack | 10 V | 150 °C | MOSFET (Metal Oxide) | TO-220SIS | 2300 pF | 40 nC | 30 V | N-Channel | 550 V | 14 A | 370 mOhm | Through Hole |