SCT4026DW7HR Series

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Grade	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Qualification	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor SCT4026DW7HRTL	150 W	18 V	2320 pF	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	N-Channel	-4 V	21 V	4.8 V	750 V	AEC-Q101	34 mOhm	TO-263-7L	51 A	175 °C	Surface Mount	94 nC

Catalog

750V, 51A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

AEC-Q101 qualified automotive grade product. SCT4026DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.