MT53E1G64 Series

Catalog

IC DRAM 64GBIT PAR 556WFBGA

Part	Clock Frequency	Supplier Device Package	Memory Format	Technology	Memory Organization	Memory Interface	Memory Size	Grade	Memory Type	Qualification	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Voltage - Supply
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit
Micron Technology Inc. MT53E1G64D4HJ-046 AUT:C	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit	Automotive	Volatile	AEC-Q100	125 °C	-40 °C	18 ns	Surface Mount	1.06 V	1.17 V
Micron Technology Inc. MT53E1G64D4HJ-046 AAT:C TR	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit	Automotive	Volatile	AEC-Q100	105 °C	-40 °C	18 ns	Surface Mount	1.06 V	1.17 V
Micron Technology Inc. MT53E1G64D4SQ-046 WT:A TR	2.133 GHz		DRAM	SDRAM - Mobile LPDDR4	1 G		64 Gbit		Volatile		85 °C	-30 °C					1.1 V
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:A TR	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit
Micron Technology Inc. MT53E1G64D4HJ-046 WT:A	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit	Automotive	Volatile	AEC-Q100	95 °C	-40 °C	18 ns	Surface Mount	1.06 V	1.17 V
Micron Technology Inc. MT53E1G64D4HJ-046 AIT:C TR	2.133 GHz	12.4x12.4 556-WFBGA	DRAM	SDRAM - Mobile LPDDR4X	1 G	Parallel	64 Gbit	Automotive	Volatile	AEC-Q100	95 °C	-40 °C	18 ns	Surface Mount	1.06 V	1.17 V