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MOSFET N-CH 600V 20A TO220
| Part | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 165 W | 20 A | MOSFET (Metal Oxide) | 48 nC | N-Channel | 10 V | Through Hole | 600 V | 150 °C | TO-220-3 | 30 V | 1680 pF | 3.7 V | TO-220 |