DRAM CHIP MOBILE-DDR SDRAM 256M-BIT 8MX32 1.8V 90-PIN TF-BGA
| Part | Write Cycle Time - Word, Page | Memory Organization | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Clock Frequency | Memory Type | Memory Size | Technology | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Memory Format | Memory Interface | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 15 ns | 8M x 32 | 1.95 V | 1.7 V | 90-TFBGA | 166 MHz | Volatile | 256 Gbit | SDRAM - Mobile LPDDR | 90-TFBGA (8x13) | 70 °C | 0 °C | Surface Mount | DRAM | Parallel | 5.5 ns |
ISSI, Integrated Silicon Solution Inc | 15 ns | 8M x 32 | 1.95 V | 1.7 V | 90-TFBGA | 166 MHz | Volatile | 256 Gbit | SDRAM - Mobile LPDDR | 90-TFBGA (8x13) | 70 °C | 0 °C | Surface Mount | DRAM | Parallel | 5.5 ns |
ISSI, Integrated Silicon Solution Inc | 15 ns | 8M x 32 | 1.95 V | 1.7 V | 90-TFBGA | 166 MHz | Volatile | 256 Gbit | SDRAM - Mobile LPDDR | 90-TFBGA (8x13) | 85 °C | -40 °C | Surface Mount | DRAM | Parallel | 5.5 ns |
ISSI, Integrated Silicon Solution Inc | 15 ns | 8M x 32 | 1.95 V | 1.7 V | 90-TFBGA | 166 MHz | Volatile | 256 Gbit | SDRAM - Mobile LPDDR | 90-TFBGA (8x13) | 85 °C | -40 °C | Surface Mount | DRAM | Parallel | 5.5 ns |