IC DRAM 4GBIT PARALLEL 78TWBGA
| Part | Memory Organization | Memory Format | Clock Frequency | Grade | Voltage - Supply [Max] | Voltage - Supply [Min] | Technology | Write Cycle Time - Word, Page | Access Time | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Supplier Device Package [x] | Supplier Device Package | Supplier Device Package [y] | Qualification | Mounting Type | Memory Type | Memory Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.575 V | 1.425 V | SDRAM - DDR3 | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 9 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 9 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 933 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 8 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 8 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 95 °C | -40 °C | Parallel | 9 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 933 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 9 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 95 °C | -40 °C | Parallel | 9 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 933 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 8 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 105 °C | -40 °C | Parallel | 8 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |
ISSI, Integrated Silicon Solution Inc | 512 M | DRAM | 800 MHz | Automotive | 1.45 V | 1.283 V | SDRAM - DDR3L | 15 ns | 20 ns | 95 °C | -40 °C | Parallel | 8 | 78-TWBGA | 10.5 | AEC-Q100 | Surface Mount | Volatile | 512 kb |