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MOSFET N-CH 40V 82A TO220SIS
| Part | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220-3 Full Pack | 3.8 mOhm | TO-220SIS | 40 V | 4.5 V 10 V | N-Channel | 2.4 V | Through Hole | 82 A | 36 W | 175 °C | 63.4 nC | 4670 pF | MOSFET (Metal Oxide) | 20 V |