2N6491 Series

Power Bipolar Transistor, NPN, 80 V, 15 A

Catalog

Power Bipolar Transistor, NPN, 80 V, 15 A

Part	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor 2N6491G	Through Hole	TO-220	80 V	1.8 W	TO-220-3	1 mA	20	3.5 V	PNP	15 A	5 MHz	150 °C	-65 °C

Catalog

Power Bipolar Transistor, NPN, 80 V, 15 A

Key Features

• DC Current Gain Specified to 15 Amperes-- hFE= 20-150 @ IC= 5.0 Adc; hFE= 5.0 (Min) @ IC= 15 Adc

• Collector-Emitter Sustaining Voltage--VCEO(sus)= 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491

• High Current Gain--Bandwidth ProductfT= 5.0 MHz (Min) @ IC = 1.0 Adc

• TO-220AB Compact Package

• Pb-Free Packages are Available

Description

The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.