TIP31C%20(LEGACY%20FAIRCHILD) Series

NPN Bipolar Power Transistor

Catalog

NPN Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor TIP31CTU	10 hFE	300 µA	100 V	NPN	2 W	TO-220-3	Through Hole	3 A	3 MHz	150 °C	TO-220-3	1.2 V
ON Semiconductor TIP31ATU	10 hFE	300 µA		NPN	2 W	TO-220-3	Through Hole	3 A	3 MHz	150 °C	TO-220-3	1.2 V	60 V
ON Semiconductor TIP31CG	10 hFE	300 µA	100 V	NPN	2 W	TO-220	Through Hole	3 A	3 MHz		TO-220-3	1.2 V		150 °C	-65 °C
ON Semiconductor TIP31B	10 hFE	300 µA	80 V	NPN	2 W	TO-220-3	Through Hole	3 A	3 MHz	150 °C	TO-220-3	1.2 V
ON Semiconductor TIP31AG	10 hFE	300 µA		NPN	2 W	TO-220	Through Hole	3 A	3 MHz		TO-220-3	1.2 V	60 V	150 °C	-65 °C
ON Semiconductor TIP31ATU_F129	10 hFE	300 µA		NPN	2 W	TO-220-3	Through Hole	3 A	3 MHz	150 °C	TO-220-3	1.2 V	60 V
ON Semiconductor TIP31B	10 hFE	300 µA	80 V	NPN	2 W	TO-220-3	Through Hole	3 A	3 MHz	150 °C	TO-220-3	1.2 V

Catalog

NPN Bipolar Power Transistor

Key Features

• Collector-Emitter Saturation Voltage- VCE(sat)= 1.2 Vdc(Max) @ IC= 3.0 Adc

• Collector-Emitter Sustaining Voltage-VCEO(sus)= 60 Vdc (min) - TIP31A, TIP32A=80 Vdc (min) - TIP31B, TIP32B=100 Vdc (min) - TIP31C, TIP32C

• High Current Gain Bandwidth ProductfT= 3.0 MHz (min) @ IC= 500 mAdc

• Compact TO-220 AB Package

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN); and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devicesReplacement Active Part Number:TIP31C