DIODE MODULE GP 100V 50A 2TOWER
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Technology | Speed | Package / Case | Mounting Type | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 °C | -55 °C | 1.3 V | 100 V | 1 Pair Common Cathode | Standard | 200 mA 500 ns | Twin Tower | Chassis Mount | 50 A | Twin Tower | 75 ns |
GeneSiC Semiconductor | 150 °C | -55 °C | 1.3 V | 100 V | 1 Pair Common Anode | Standard | 200 mA 500 ns | Twin Tower | Chassis Mount | 50 A | Twin Tower | 75 ns |