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MOSFET N-CH 600V 5A TO220SIS
| Part | Supplier Device Package | Operating Temperature | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220SIS | 150 °C | 35 W | 16 nC | 1.43 Ohm | 600 V | 10 V | 700 pF | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 30 V | 5 A | N-Channel | 4.4 V | Through Hole |