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DIODE MODULE GP 600V 200A 2TOWER
| Part | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Diode Configuration | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 200 A | 600 V | Chassis Mount | 200 mA 500 ns | 1 Pair Common Cathode | 150 °C | -55 °C | 180 ns | 1.3 V | Twin Tower | Standard | Twin Tower |
GeneSiC Semiconductor | 200 A | 600 V | Chassis Mount | 200 mA 500 ns | 1 Pair Common Anode | 150 °C | -55 °C | 180 ns | 1.3 V | Twin Tower | Standard | Twin Tower |