TRANSISTOR: N/P-MOSFET; UNIPOLAR; 20/-20V; 0.1/-0.1A; IDM: 0.4A
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Feature | FET Feature | Power - Max [Max] | Configuration | Technology | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 7.1 pF | 3.5 Ohm | 1.2 V | Logic Level Gate | 120 mW | N and P-Channel | MOSFET (Metal Oxide) | Surface Mount | 6-SMD Flat Leads | 20 V | 100 mA | 1 V | VMT6 | 150 °C |