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MOSFET N-CH 100V 34A TO220SIS
| Part | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Operating Temperature | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 9.5 mOhm | N-Channel | 100 V | TO-220SIS | 34 A | 4 V | 35 W | 150 °C | Through Hole | 20 V | 2600 pF | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | 38 nC |