25ETS10 Series

Catalog

DIODE GEN PURP 1KV 25A TO263AB

Part	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
Vishay General Semiconductor - Diodes Division VS-25ETS10STRRPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	150 °C	-40 °C	100 µA	TO-263AB (D2PAK)	200 mA 500 ns	1.14 V	25 A	Standard	1000 V
Vishay General Semiconductor - Diodes Division VS-25ETS10STRLPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	150 °C	-40 °C	100 µA	TO-263AB (D2PAK)	200 mA 500 ns	1.14 V	25 A	Standard	1000 V
Vishay General Semiconductor - Diodes Division VS-25ETS10STRR-M3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	150 °C	-40 °C	100 µA	TO-263AB (D2PAK)	200 mA	1.14 V	25 A	Standard	1000 V	Standard Recovery >500ns
Vishay General Semiconductor - Diodes Division VS-25ETS10SPBF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	150 °C	-40 °C	100 µA	TO-263AB (D2PAK)	200 mA 500 ns	1.14 V		Standard	1000 V