DIODE MOD SCHOT 600V 250A 2TOWER
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Diode Configuration | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 150 °C | -55 °C | Chassis Mount | Twin Tower | 1 mA | 800 mV | 250 A | 600 V | 200 mA 500 ns | 1 Pair Common Cathode | Schottky | Twin Tower |
GeneSiC Semiconductor | 150 °C | -55 °C | Chassis Mount | Twin Tower | 1 mA | 800 mV | 250 A | 600 V | 200 mA 500 ns | 1 Pair Common Anode | Reverse Polarity Schottky | Twin Tower |