MJ11028G
ActiveSanyo
HIGH-CURRENT NPN SILICON POWER T
Deep-Dive with AI
Search across all available documentation for this part.
MJ11028G
ActiveSanyo
HIGH-CURRENT NPN SILICON POWER T
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MJ11028G |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Cutoff (Max) | 2 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 300 W |
| Supplier Device Package | TO-204 |
| Supplier Device Package | TO-3 |
| Vce Saturation (Max) @ Ib, Ic | 3.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 23 | $ 13.15 | |
| Tray | 1 | $ 20.24 | ||
| 10 | $ 14.49 | |||
| 25 | $ 12.98 | |||
| 100 | $ 11.38 | |||
Description
General part information
MJ11028G
Bipolar (BJT) Transistor NPN - Darlington 60 V 50 A 300 W Through Hole TO-204 (TO-3)
Documents
Technical documentation and resources
No documents available