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GE12090CDA3 - GE12090CDA3

GE12090CDA3

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GE Aerospace

1200V 875A SIC HALF-BRIDGE MODUL

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GE12090CDA3 - GE12090CDA3

GE12090CDA3

Active
GE Aerospace

1200V 875A SIC HALF-BRIDGE MODUL

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationGE12090CDA3
Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C875 A
Drain to Source Voltage (Vdss)1200 V
Drain to Source Voltage (Vdss)1.2 kV
Input Capacitance (Ciss) (Max) @ Vds58.6 nF
Mounting TypeChassis Mount
Operating Temperature175 °C
Package / CaseModule
Power - Max [Max]2350 W
Rds On (Max) @ Id, Vgs2.19 mOhm
Supplier Device PackageModule
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 2164.00
10$ 2039.00

Description

General part information

GE12090CDA3

Mosfet Array 1200V (1.2kV) 875A 2350W Chassis Mount Module

Documents

Technical documentation and resources