WN3S3060CXQ
ActiveWeEn Semiconductors Co., Ltd
DIODE TO220F
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WN3S3060CXQ
ActiveWeEn Semiconductors Co., Ltd
DIODE TO220F
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WN3S3060CXQ |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 15 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220F |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 700 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 6000 | $ 0.27 | |
Description
General part information
WN3S3060CXQ
Diode Array 1 Pair Common Cathode 60 V 15A Through Hole TO-220-3 Full Pack, Isolated Tab
Documents
Technical documentation and resources
No documents available