Zenode.ai Logo
Beta
K

BSF083N03LQG

Active
Infineon Technologies

N-CHANNEL POWER MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

BSF083N03LQG

Active
Infineon Technologies

N-CHANNEL POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSF083N03LQG
Current - Continuous Drain (Id) @ 25°C53 A, 13 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case3-WDSON
Power Dissipation (Max)2.2 W, 36 W
Rds On (Max) @ Id, Vgs8.3 mOhm
Supplier Device PackageCanPAK M™, MG-WDSON-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 717$ 0.42

Description

General part information

BSF083N03LQG

N-Channel 30 V 13A (Ta), 53A (Tc) 2.2W (Ta), 36W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

Documents

Technical documentation and resources

No documents available