IRFPG42
ActiveHarris Corporation
N-CHANNEL POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
IRFPG42
ActiveHarris Corporation
N-CHANNEL POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFPG42 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 120 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 4.2 Ohm |
| Supplier Device Package | TO-247 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 133 | $ 2.27 | |
Description
General part information
IRFPG42
N-Channel 1000 V 3.9A (Tc) 150W (Tc) Through Hole TO-247
Documents
Technical documentation and resources
No documents available