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UF4SC120030B7S - UF3C120080B7S

UF4SC120030B7S

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Qorvo

1200V/30MO,SICFET,G4,TO263-7

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UF4SC120030B7S - UF3C120080B7S

UF4SC120030B7S

Active
Qorvo

1200V/30MO,SICFET,G4,TO263-7

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUF4SC120030B7S
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)12 V, 12 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs37.8 nC
Input Capacitance (Ciss) (Max) @ Vds1450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)341 W
Rds On (Max) @ Id, Vgs39 mOhm
Supplier Device PackageD2PAK-7L
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 800$ 10.55

Description

General part information

UF4SC120030B7S

P-Channel 1200 V 56A (Tj) 341W (Tc) Surface Mount D2PAK-7L

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