GE12160CEA3
ActiveGE Aerospace
SIC 2N-CH 1200V 1.425KA MODUL
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GE12160CEA3
ActiveGE Aerospace
SIC 2N-CH 1200V 1.425KA MODUL
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GE12160CEA3 |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 1.425 kA |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 3744 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 90000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Power - Max [Max] | 3.75 kW |
| Rds On (Max) @ Id, Vgs | 1.5 mOhm |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 3241.00 | |
| 10 | $ 3053.00 | |||
Description
General part information
GE12160CEA3
Mosfet Array 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount Module
Documents
Technical documentation and resources