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EPC2219 - EPC2219

EPC2219

Active
Efficient Power Conversion Corporation

TRANS GAN 65V AECQ101 3.3OHM DIE

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DocumentsDatasheet
EPC2219 - EPC2219

EPC2219

Active
Efficient Power Conversion Corporation

TRANS GAN 65V AECQ101 3.3OHM DIE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC2219
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)65 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.064 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]10 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDie
Rds On (Max) @ Id, Vgs3.3 Ohm
Supplier Device PackageDie
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.98
10$ 0.81
100$ 0.63
500$ 0.53
1000$ 0.53
Digi-Reel® 1$ 0.98
10$ 0.81
100$ 0.63
500$ 0.53
1000$ 0.53
Tape & Reel (TR) 2500$ 0.53

Description

General part information

EPC2219

N-Channel 65 V 500mA (Ta) Surface Mount Die

Documents

Technical documentation and resources