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SFAF2004G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A ITO220AC

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SFAF2004G

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A ITO220AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSFAF2004G
Capacitance @ Vr, F170 pF
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2 Full Pack
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageITO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If975 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.48
50$ 1.19
100$ 0.94
500$ 0.80
1000$ 0.65
2000$ 0.61
5000$ 0.58
10000$ 0.56

Description

General part information

SFAF2004G

Diode 200 V 20A Through Hole ITO-220AC

Documents

Technical documentation and resources